A single poly-Si gate-all-around junctionless fin field-effect transistor for use in one-time programming nonvolatile memory
نویسندگان
چکیده
منابع مشابه
A single poly-Si gate-all-around junctionless fin field-effect transistor for use in one-time programming nonvolatile memory
This work demonstrates a feasible single poly-Si gate-all-around (GAA) junctionless fin field-effect transistor (JL-FinFET) for use in one-time programming (OTP) nonvolatile memory (NVM) applications. The advantages of this device include the simplicity of its use and the ease with which it can be embedded in Si wafer, glass, and flexible substrates. This device exhibits excellent retention, wi...
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In this paper, we have presented a heterojunction gate all around nanowiretunneling field effect transistor (GAA NW TFET) and have explained its characteristicsin details. The proposed device has been structured using Germanium for source regionand Silicon for channel and drain regions. Kane's band-to-band tunneling model hasbeen used to account for the amount of band-to...
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A novel gate-all-around (GAA) poly-Si nanowire (NW) floating gate (FG) memory device was fabricated and characterized. The enhanced electric field around the corners of the nanowire channels boosts the P/E process and thus the operation voltages are dramatically lowered. Furthermore, the non-localized trapping feature characteristic of the FG makes the injection or ejection of electrons easier ...
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ژورنال
عنوان ژورنال: Nanoscale Research Letters
سال: 2014
ISSN: 1556-276X
DOI: 10.1186/1556-276x-9-603